2N from Fairchild Semiconductor. Find the PDF Datasheet, Specifications and Distributor Information. 2N Datasheet PDF Download – NPN Transistoor, 2N data sheet. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose.

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2n914 datasheet pdf

Manufactured by the evaporative-fus- ion technique which creates unusually low saturation resistance. For PNP devices, planar tech- niques proved inadequate since any attempt to increase voltage ratings be- yond approximately 20 volts through increasing collector material resistivity induced a phenomenon, called chan- neling, which actually increased leak- age datwsheet far beyond tolerable levels. Most typesofferguaranteed switching times of less than 50 nanoseconds.

Consider, for example, a type in the high-frequency category.

2N Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

If the postal return card has been removed from your copy of this publication, write on your company letterhead. Their grip actually increases as shock and vibration increases.

A cross index page T88 identifies types in numerical sequence. The collector-base junction, therefore, is properly terminated un- derneath the oxide coating where it is protected against environmentally in- duced leakage currents.


Kemet was first to bring you high-voltage solid tantalums datxsheet, 60, and 75 volts — three big contributions in 2Vi years! These new microelectronic devices have two closely matched low-level NPN silicon planar transistors, electrically isolated but thermally connected, in a single 6-lead TO-5 package. It has a major diameter of 0. Baird-Atomic offers the most complete line of Engineers and Scientists: As added benefits you’ll enjoy device uniformity, fewer rejects and simplified purchasing.

Over-all sock- et height is 0. For complete data, and new Reliability daatasheet, write Dept.

Motorola 2N Datasheet.

The formation of channels has been traced to effects of ionized or polarized particles on or within the passivating oxide dstasheet which create an electrical environment that tends to alter the ap- parent polarity of the material directly beneath the datasheey an effect which is particidarly pronounced in lightly doped P-type material.

The broad, inte- grated capabilities that made it possible are being applied constantly to the im- provement of Sylvania semiconductors. AJ ,ge pnp,AJ,ge pnp. A3, for example, means the type can be found in the third block of the Audio section.

Heat-treatable PD is particularly suited for applica- tions requiring extensive cold working and upsetting. Dissipation ratings to watts, currents to 20 amperes.


Over 5 megawatts of 30 ampere transistors are now serving in 2j914 and industrial applica- tions.


Type ab me MAX. Units are designed for high frequency amplifier and oscillator circuits. Phone code Diffused-mesa con- struction is said to have improved a present line of 41 silicon power transistors. Total function logic Connection oriented packaging Connection oriented batch manufacturing See how these unique features will benefit you.

P23 2N HF71, P For technical data on any member of the J-Series, write to: Mil lliii mu i 1 eatasheet 2N 2N 2N ill! Westinghouse Semiconductor Division, Young- wood, Pa. AJ, si npn,AJ,ge pnp. These advanced units offer you ultra-high performance from dc to me, typical mid-frequency noise figures of less than 2 db, and increased high-frequency stability through guaranteed maximum output capacitance of 2.

These new subminiature devices offer you minimum cutoff frequency of 90 gc to gc at -2 volts with low junction capacitance – Cj 0 bias from 0. As you are undoubtedly aware, P.