AD162 DATASHEET PDF

AD162 DATASHEET PDF

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Af B N Milliard G. The collector voltage is negative with respect to base in PNP transistors and positive w. This nomogram should not be used where forced air cooling is employed, or where heatsink material other than aluminium is desired.

Note 1 Mica washer B 1 Supplied 1 Plain washer 1 on request When mounted on a heatsink it is essential that a plain washer be used to damage to the devices while tightening the mounting screw. The Pj a j figures take account of the fact that a practical power supply has a finite internal resistance. V min P t Jt max Case No. Thus a closer approximation to the true conditions is necessary.

The sinewave value is quoted because it is load power which will be obtained when, for test purposes, the equipment is driven with a sinewave because of the internal resistance of the power supply, the dissi- pations with sinewave drive are lower than with a constant line voltage. Final Data The transfer from tentative data to final data involves the addition of those numerical values and curves which were not available at tentative data stage and small adjustments to those values already quoted in tentative data.

The normal polarity version stud cathode has no special final letter. TO-1 construction with envelope isolated. The tentative data may not include all the characteristics or ratings which will be incorporated later in the final data and some of the numerical values quoted may be slightly adjusted later on.

V decreases by approximately 2. Burrs or thickening at the edges of the four holes must be removed and the transistor bolted down on a plane surface. Shield connected to envelope Accessories available: The transistor may be dip-soldered at a solder temperature of C for a maximum time of 5 seconds. In second breakdown the device offers only a very low resistance to collector current, and is invariably destroyed if the current is not specially limited by a circuit external to the transistor.

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Datasheet Page , pdf datasheet & application note

Actual pulse widths of 1. The equation used is: Book 1 blue Semiconductor devices and integrated circuits Book 2 orange Valves and tubes Book 3 green Dtasheet components, materials, and assemblies. A second subscript may be used to identify the circuit configuration. When using a soldering iron, the transistor may be soldered directly into a circuit, but heat conducted to the junction should if possible be kept to a minimum by the use of a heat shunt.

SOAR information, and construct the boundaries using the method fully described in the reference TP All Mullard data, including pulsed power ratings, assume the use of square waves and resistive loads. The type nomenclature of a discrete device or, in certain cases, of a range of devices, consists of two letters followed by a serial number. Explanation of Handbook Data 1. Definition of TjT mbT case. A further linear interpolation between the two 1 -7ms areas is then needed to approximate to the 1 -7ms SOAR at duty cycle of The effect of heatsinks of various thermal resistance and contact resistance is often included in the above datashet.

Lock ‘A’ of the centre lead will now enter the hole Fig. Tentative Data Tentative data aims at providing information on new devices as early as possible to allow the customer to proceed with circuit design.

TO Collector connected to the metal part of the mounting surface 2 jmo X. Care must be taken to ensure good thermal contact between the mounting baseandtheheatsink. A permissible area of operation dtaasheet all conditions of base drive provided the dissipation rating is not exceeded area 1 and an area where operation is allowable under certain specified conditions area 2.

Dissipation and heatsink considerations: At low collector currents the voltage across the transistor can exceed the Vceo rating as shown in Fig. Static value of parameters shall be indicated by the upper case capital subscripts. CM I n max. The thermal resistances required are given assuming these lower dissipations.

Icm The maximum permissible instantaneous value of the total collector current. Reissue of final data may be made from time to time to incorporate additional information resulting from prolonged production experience or to meet new applications. When using a soldering iron, transistors may be soldered directly into the circuit, but heat conducted to the junction should.

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These values are chosen by the device manufacturer to provide acceptable serviceability eatasheet the device in datasheett applications, taking responsibility for normal aad162 in operating conditions due to variations in supply voltage, environment, equipment components, equipment control adjust- ment, load, signal or characteristics of all other devices in the equipment.

The list of these ratings and their definitions is given as follows: O is the reference point for V. See page 4 datasueet BD data sheet.

Instantaneous value of total emitter current. The equipment manufacturer should design so that initially and throughout life no absolute maximum value for the intended service is exceeded with any device under the worst probable operating conditions with respect to variations datasheer supply voltage, environment, equipment components, equipment control adjustment, load, signal or characteristics of the device under consideration and of all other devices in the equipment.

Sequence of subscripts The first subscript denotes the terminal at which the current or terminal voltage is measured. These recommendations apply to a transistor mounted flush on a board having punched-through holes, or spaced at least 1.

V Collector knee voltage see Fig.

Datasheeets & Application Notes

Under these circumstances the leads should be retinned using a suitable activated flux. Peak value of the total emitter current. The BCY87 and 88 are intended for applications in the pre-stages of differential amplifiers, where low offset, drift and noise are of prime importance. The base of the transistor is connected to the metal envelope.

The BF is primarily intended for appli- cation in a forward gain controlled pre-amplifier in v. The permissible total power dissipation is dependent upon temperature and its relationship is shown by means of a chart as shown in figure 3.