BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.
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Buaf datasheet, equivalent, cross reference search. This data sheet contains target or goal specifications for product development.
BU2508DF Datasheet PDF
II Datashewt for repetitive pulse operation. Silicon diffused power transistor online from elcodis, view and download budf pdf datasheet, diodes, rectifiers specifications.
Typical collector-emitter saturation voltage. No liability will be accepted by the publisher for any consequence of its use. Budf transistor equivalent substitute crossreference search. Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
Application information Where application information is given, it is advisory and does not form part of the specification.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Buaf transistor equivalent substitute crossreference search.
These are stress ratings only and operation of the device at these or at any other conditions above those given datazheet the Characteristics sections of this specification is not implied. C 1 Turn-off current.
July 7 Rev 1. Features exceptional tolerance to bj2508df drive and collector current load variations resulting in a very low worst case dissipation. Stress above one or more of the limiting values may cause permanent damage to the device. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
Typical collector storage and fall time.
Budf philips semiconductors, budf datasheet. Silicon diffused power transistor buaf datasheet catalog.
This data sheet contains final product specifications. Exposure to limiting values for extended periods may affect device reliability. C I Region of permissible DC operation.
BU DF PHI: NPN+DIO SOT transistor V 8 A 45 W at reichelt elektronik
July 2 Rev 1. Typical base-emitter saturation voltage. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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BUDF Datasheet PDF –
Typical DC current gain. Refer to mounting instructions for F-pack envelopes. High collectorbase voltagevcbov high speed switching. July 1 Rev 1. SOT; The seating plane is electrically isolated from all terminals. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
July 5 Rev 1.
Forward bias safe operating area. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor. July 6 Rev 1. Philips semiconductors product specification bu508df diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor with an integrated damper diode in a plastic fullpack envelope. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice.