isc website： 1 isc Silicon NPN Power Transistor. BUAF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS)= V (Min ). BUAF BUAF; Silicon Diffused Power Transistor;; Package: SOT (3- lead TOF). High voltage, high speed switching npn transistor in a plastic. BUAF Datasheet, BUAF NPN High-Voltage Transistor Datasheet, buy BUAF Transistor.
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Bu2508af transistor datasheet bookmarks
A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals changes the current flowing through another pair of terminals. Because the controlled output power can be higher than the controlling input power, a transistor can amplify a signal.
Bipolar transistors are so named because their operation involves both electrons and holes. These two kinds of charge carriers are characteristic of the two kinds of doped semiconductor material.
In contrast, unipolar transistors such as the field-effect transistors have only one kind of charge carrier. NPN is one of the bbu2708af types of bipolar transistors, consisting of datasheet layer of P-doped semiconductor the “base” between two N-doped layers. Bu2708xf small current entering the base is amplified to produce a large collector and emitter current. Region Macedonia Kosovo Global. Computer components Hardware Network Notebook-Battery.
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BUAF Datasheet pdf – Silicon Diffused Power Transistor – Philips
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